Thermal carrier generation in charge-coupled devices

Abstract
The build-up of thermally generated carriers in a charge-coupled device shift register is characterized by constructing a model for the generation inside a single shift-register bit. Using the model, theoretical response curves are constructed for two practical modes of operation where the contribution from the generation of carriers can be substantial. Experiments are presented which confirm all aspects of the theoretical response curves, including the presence of an initial period of reduced generation in one of the two modes. Procedures for determining generation parameters directly from observed CCD characteristics are presented and implemented. One generation parameter, the minority carrier lifetime τ, is determined by employing the CCD connected in a gate-controlled diode configuration; two others, the depleted surface generation velocity s0, and the general shape of the depletion layer, are determined utilizing a curve fitting procedure. The spatial variation in generation rates is also investigated and found to possess a distribution which is skewed positively and not Gaussian.