The gate-controlled diode s0 measurement and steady-state lateral current flow in deeply depleted MOS structures
- 31 December 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (12) , 1257-1269
- https://doi.org/10.1016/0038-1101(74)90004-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electrical characteristics of the SiO2Si interface near midgap and in weak inversionSolid-State Electronics, 1974
- An experimental determination of the carrier lifetime near the SiSiO2 interfaceSolid-State Electronics, 1973
- Interface states in SiSiO2 interfacesSolid-State Electronics, 1972
- Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized SiliconJournal of the Electrochemical Society, 1971
- On the determination of surface recombination velocity from the transient response of MIS structuresSolid-State Electronics, 1970
- On the separation of bulk and surface components of lifetime using the pulsed MOS capacitorSolid-State Electronics, 1970
- Surface recombination in semiconductorsSurface Science, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952