Optical absorption in semiconductors with high impurity concentrations in the presence of an electric field
- 1 October 1970
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 3 (10) , 2044-2056
- https://doi.org/10.1088/0022-3719/3/10/006
Abstract
The calculation of the absorption coefficient of a direct gap semiconductor in the presence of a high density of impurities is considered, in the absence and presence of an electric field. A two-band model is used and the absorption coefficient is calculated directly from the Kubo equation in the one-electron approximation. The method uses essentially a semiclassical approximation and calculates the two-particle propagator. Typical results are given for p-type GaAs and are found to agree reasonably with experiments.Keywords
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