Nanoscale Dislocation Patterning inLattice-Mismatched Heteroepitaxy
- 19 December 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 88 (1) , 015507
- https://doi.org/10.1103/physrevlett.88.015507
Abstract
Dislocation patterning in PbTe on PbSe (001) heteroepitaxy is studied using scanning tunneling microscopy. It is shown that exceedingly regular square arrays of misfit dislocations are formed during strain relaxation. This is based on the existence of a homogeneous dislocation nucleation process, a high dislocation mobility within the interface, and an effective repulsive interaction between neighboring dislocations. Similar results are expected also for other highly mismatched heteroepitaxial systems.Keywords
This publication has 18 references indexed in Scilit:
- Tuning of Vertical and Lateral Correlations in Self-OrganizedQuantum Dot SuperlatticesPhysical Review Letters, 2000
- Spontaneous ordering of nanostructures on crystal surfacesReviews of Modern Physics, 1999
- Lateral ordering of quantum dots by periodic subsurface stressorsApplied Physics Letters, 1999
- Dislocation-induced changes in quantum dots: Step alignment and radiative emissionApplied Physics Letters, 1999
- Nanoscale Structuring by Misfit Dislocations inEpitaxial SystemsPhysical Review Letters, 1997
- Strong alignment of self-assembling InP quantum dotsPhysical Review B, 1996
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Migration and gettering of Si, Be, and ambient-related O in AlGaAs/GaAs laser structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Misfit dislocations in lattice-mismatched epitaxial filmsCritical Reviews in Solid State and Materials Sciences, 1992
- Surface free energies of lead tellurideSurface Science, 1971