Carrier reflection at the superconductor-semiconductor boundary observed using a coplanar-point-contact injector
- 1 April 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (10) , 7274-7276
- https://doi.org/10.1103/physrevb.41.7274
Abstract
The Andreev reflection of carriers at the boundary between a superconductor and a semiconductor has been studied buy measurement of the differential resistance of a n-type-Si–Nb point contact with a coplanar structure. The boundary condition of the pair potential in the Si-Nb proximity system is obtained from these measurements. A carrier-concentration dependence of the pair potential at the boundary is observed. The pair potential in the Si at the boundary increases with increasing carrier concentration.Keywords
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