Carrier-concentration dependence of critical superconducting current induced by the proximity effect in silicon
- 1 February 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (3) , 2042-2045
- https://doi.org/10.1103/physrevb.33.2042
Abstract
The carrier-concentration dependence of the critical superconducting current induced by the proximity effect in a heavily B-doped Si has been studied experimentally. It is found that the critical current which flows through the p-type-Si–coupled junction can be controlled both by the acceptor concentration and by the induced carrier concentration by the electric potential applied to the gate electrode.Keywords
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