Electron concentration and mobility in selectively doped edge quantum wires
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 267 (1-3) , 296-299
- https://doi.org/10.1016/0039-6028(92)91141-w
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- High-field electron transport in quantum wires studied by solution of the Boltzmann equationPhysical Review B, 1989
- Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in SemiconductorsJapanese Journal of Applied Physics, 1989
- One-dimensional transport in quantum well wire-high electron mobility transistorApplied Physics Letters, 1986
- Mobility in a quasi-one-dimensional semiconductor: An analytical approachPhysical Review B, 1986
- Alloy scattering limited mobility in ultrathin wires of ternary semiconductorsSurface Science, 1986
- Polaron transport in quasi-one-dimensional semiconductor heterostructuresSurface Science, 1986
- Screening and elementary excitations in narrow-channel semiconductor microstructuresPhysical Review B, 1985
- Phonon scattering of electrons in quasi-one-dimensional and quasi-two-dimensional quantum wellsSurface Science, 1984
- Impurity-limited mobility of semiconducting thin wireJournal of Applied Physics, 1983
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980