One-dimensional transport in quantum well wire-high electron mobility transistor
- 22 December 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (25) , 1738-1740
- https://doi.org/10.1063/1.97232
Abstract
A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.Keywords
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