The Influence of Defect Surface Layers on the Capacitive Properties of MOS Structures
- 16 June 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 77 (2) , 699-707
- https://doi.org/10.1002/pssa.2210770236
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Temperature dependence of capacitance-voltage characteristics in implanted MOS structuresPhysica Status Solidi (a), 1982
- Capacitance studies on amorphous silicon Schottky barrier diodesJournal of Non-Crystalline Solids, 1980
- Temperature Dependence of Inversion-Layer Frequency Response in SiliconBell System Technical Journal, 1967
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965