Temperature Dependence of Inversion-Layer Frequency Response in Silicon
- 1 March 1967
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 46 (3) , 513-522
- https://doi.org/10.1002/j.1538-7305.1967.tb04232.x
Abstract
Conductance-voltage and capacitance-voltage curves of metal-oxide semiconductor (MOS) capacitors on n-type silicon were investigated in the temperature range between room temperature and 200C. Plots of the inversion-layer conductance versus r...Keywords
This publication has 6 references indexed in Scilit:
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- Improved Properties of Silicon Dioxide Layers Grown Under BiasJournal of the Electrochemical Society, 1966
- Surface charge after annealing of Al-SiO2-Si structures under biasProceedings of the IEEE, 1966
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965
- Lateral AC current flow model for metal-insulator-semiconductor capacitorsIEEE Transactions on Electron Devices, 1965
- Conductivity and Hall Effect in the Intrinsic Range of GermaniumPhysical Review B, 1954