An analysis of the two electron satellite spectrum of GaAs in high magnetic fields
- 15 January 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (2) , 906-912
- https://doi.org/10.1063/1.347332
Abstract
We report the observation of 2p0,−1, 2s0, 3d−1,−2, 3p−1, and 4f−3 structures in the ‘‘two electron’’ satellite photoluminescence of excitons bound to the (hydrogenic) shallow donors Ge and Se/Sn in high purity metalorganic vapor‐phase epitaxy grown GaAs. The attribution is based upon selective excitation of the different principal donor bound exciton (D0,X) lines at magnetic fields of 7 T at T=1.5 K, combined with a careful analysis of the behavior of the hydrogen atom in a magnetic field. The results are interpreted in terms of high magnetic field quantum numbers and in terms of shapes of hydrogen wavefunctions in strong magnetic fields. One of the samples used in this work is so pure that for the first time donors have been identified from the relatively broad n=2 two electron satellite involving the (D0,X) ground state at zero field.This publication has 31 references indexed in Scilit:
- Identification of residual donors in high-purity undoped p-type epitaxial GaAs by magnetophotoluminescenceApplied Physics Letters, 1988
- Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Donor identification in bulk gallium arsenideApplied Physics Letters, 1988
- Identification of residual donors in high-purity epitaxial GaAs by magnetophotoluminescenceApplied Physics Letters, 1987
- Donor identification in liquid phase epitaxial indium phosphideApplied Physics Letters, 1984
- Identification of germanium and tin donors in InPApplied Physics Letters, 1984
- Identification of impurities in GaAs by the magneto-optical photoluminescent spectroscopy techniqueJournal of Applied Physics, 1984
- Identification of donors in vapor grown indium phosphideJournal of Applied Physics, 1984
- Identification of residual donors in high-purity epitaxial GaAs with the use of magneto-optical spectroscopyPhysical Review B, 1983
- Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopySolid State Communications, 1981