Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode
- 24 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (17) , 1623-1625
- https://doi.org/10.1063/1.99931
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electron transport in heterostructure hot-electron diodesApplied Physics Letters, 1988
- Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodesJournal of Applied Physics, 1987
- Properties of high-purity AlxGa1−xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursorsJournal of Applied Physics, 1987
- New ultrafast switching mechanism in semiconductor heterostructuresJournal of Applied Physics, 1986
- Perpendicular transport across (Al,Ga)As and the Γ to X transitionSuperlattices and Microstructures, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Circuit Controlled Current Instabilities in ``S-Shaped'' Negative Differential Conductivity ElementsApplied Physics Letters, 1971