New ultrafast switching mechanism in semiconductor heterostructures
- 15 November 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (10) , 3775-3777
- https://doi.org/10.1063/1.337540
Abstract
A new switching mechanism in a two-terminal semiconductor heterolayer structure is proposed which capitalizes on nonlinear electron temperature effects in adjacent heterolayers. The estimated switching speed of an optimized heterostructure hot electron diode should be extremely fast, perhaps as fast as 200 fs. Data are presented on prototype devices which show the expected negative differential resistance and indicate that the basic physical model is correct.This publication has 11 references indexed in Scilit:
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