Layer-thickness dependence of cw photoluminescence in singlelayers
- 15 September 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (6) , 4429-4431
- https://doi.org/10.1103/physrevb.34.4429
Abstract
Photoluminescence data are presented for ultrathin single layers of deposited on . We observe a nonmonotonic shift of the luminescence peak with layer thickness, indicating that more than one mechanism is operative. Possible sources of the opposing shifts are discussed.
Keywords
This publication has 13 references indexed in Scilit:
- Optical studies of thermalization mechanisms ina-Si:HPhysical Review B, 1985
- Properties of amorphous semiconducting multilayer filmsJournal of Non-Crystalline Solids, 1984
- Optical properties of a-Si:H/a-Si0.2C0.8:H quantum well structuresJournal of Non-Crystalline Solids, 1983
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983
- Optical Properties of a-Si:H Ultrathin LayersJapanese Journal of Applied Physics, 1983
- Subnanosecond Total-Light Decay and Spectra in-Si: HPhysical Review Letters, 1983
- Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap statesPhysical Review B, 1982
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Above-band-gap emission in amorphous semiconductors: Localized states versus surface contaminationPhysical Review B, 1981