Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm
- 1 August 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (8L) , L1069
- https://doi.org/10.1143/jjap.44.l1069
Abstract
The As flux effect on InAs quantum dots formed by gas source molecular beam epitaxy on InP substrates, oriented following the (311)B crystallographic direction has been studied. Atomic force microscopy images show that the quantum dot (QD) density dramatically increases and quantum dot sizes decrease, when decreasing the As pressure. Moreover, the size dispersion is narrowed. Photoluminescence measurements on the high QD density samples is shifted to higher energy, toward the telecommunication important 1.55 µm emission.Keywords
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