InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects
- 1 March 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 236 (1-3) , 145-154
- https://doi.org/10.1016/s0022-0248(01)02391-0
Abstract
No abstract availableKeywords
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