Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)
- 16 May 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (20) , 2727-2729
- https://doi.org/10.1063/1.111456
Abstract
The substrate temperature and arsenic pressure dependence of the density of InAs three-dimensional (3D) islands formed on GaAs(100) is found to exhibit a behavior that cannot be reconciled within the currently popular view of MBE growth. Rather, either an arsenic coverage induced strain enhanced In migration or strain dependent arsenic incorporation at islands, or both, appear to be operative. Plan-view and cross-sectional transmission electron microscopy, including the nature of the Moiré fringes, are used to obtain cluster size distribution and demarcation between size regime for coherent versus incoherent islands. The results point to the possibility of realizing a regular array of quantum dots made of coherently strained 3D islands of uniform size via growth on prepatterned substrates.Keywords
This publication has 10 references indexed in Scilit:
- Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructuresThin Solid Films, 1993
- In situ approach to realization of three-dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substratesApplied Physics Letters, 1993
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Relaxation of strained InGaAs during molecular beam epitaxyApplied Physics Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin filmsJournal of Vacuum Science & Technology B, 1989
- Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect FormationPublished by SPIE-Intl Soc Optical Eng ,1988
- The nature of molecular beam epitaxial growth examined via computer simulationsCritical Reviews in Solid State and Materials Sciences, 1988
- Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam EpitaxyPhysical Review Letters, 1986
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)Journal of Vacuum Science & Technology B, 1984