In situ approach to realization of three-dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates
- 29 March 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (13) , 1547-1549
- https://doi.org/10.1063/1.108636
Abstract
We report the first realization of three-dimensionally confined semiconductor heterostructures via a one-step growth on nonplanar patterned substrate. Truncated pyramidal shaped mesas on GaAs (111)B patterned substrates are employed and a substrate encoded size reducing epitaxical growth process exploited to realize GaAs pinched-off pyramidal volumes of base ∼50 nm and height 13 nm.Keywords
This publication has 12 references indexed in Scilit:
- Nanofeatures on GaAs (111)B via photolithographyApplied Physics Letters, 1992
- Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)-(111)B facet structures for edge quantum wiresApplied Physics Letters, 1991
- GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111)B substratesApplied Physics Letters, 1991
- Application of selective epitaxy to fabrication of nanometer scale wire and dot structuresApplied Physics Letters, 1990
- Stimulated emission in semiconductor quantum wire heterostructuresPhysical Review Letters, 1989
- Observation of discrete electronic states in a zero-dimensional semiconductor nanostructurePhysical Review Letters, 1988
- Free surfaces and multilayer interfaces in the GaAs/AlAs systemJournal of Crystal Growth, 1987
- Pair-groove-substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxyApplied Physics Letters, 1985
- High quality molecular beam epitaxial growth on patterned GaAs substratesApplied Physics Letters, 1985