Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111)B substrates
- 22 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (16) , 1771-1773
- https://doi.org/10.1063/1.105086
Abstract
Growth control of GaAs epilayers with specular surface, free of superficial pyramid‐shape features and bulk twins, is achieved on a nonmisoriented GaAs(111)B substrate via in situ, real time measurement of specular beam intensity of reflection high‐energy electron diffraction (RHEED). Regimes of growth conditions are identified in terms of the static surface phase diagram and the temporal RHEED intensity behavior during growth, thus affording the possibility to realize a reproducible control independent of growth systems.Keywords
This publication has 14 references indexed in Scilit:
- ‘‘A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular-beam epitaxy’’Journal of Applied Physics, 1991
- Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substratesApplied Physics Letters, 1990
- Growth of InxGa1−xAs on patterned GaAs(100) substratesJournal of Vacuum Science & Technology B, 1990
- Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructureApplied Physics Letters, 1990
- Migration-enhanced epitaxy on a (111)B oriented GaAs substrateApplied Physics Letters, 1989
- Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B SubstratesJapanese Journal of Applied Physics, 1987
- Photoluminescence from AlGaAs-GaAs single quantum wells grown on variously oriented GaAs substrates by MBEJournal of Crystal Growth, 1987
- Strain-generated electric fields in [111] growth axis strained-layer superlatticesSolid State Communications, 1986
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970