Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates

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Abstract
GaAs/AlGaAs graded-index, separate confinement heterostructure quantum-well lasers with an extremely low threshold current density (J th) were grown by molecular beam epitaxy on 0.5° misoriented (111)B substrates. The J th of these lasers was reduced by 20 A/cm2 compared with that of (100)-oriented devices, which results from the quantization along the direction. The minimum J th of 158 A/cm2 was achieved for a 490 µm long device.