Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates
- 18 June 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (25) , 2533-2535
- https://doi.org/10.1063/1.102878
Abstract
We have observed intensity oscillations in reflection high‐energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.Keywords
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