Nanofeatures on GaAs (111)B via photolithography
- 17 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (7) , 850-852
- https://doi.org/10.1063/1.106534
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111)B substratesApplied Physics Letters, 1991
- Low-temperature photoluminescence from InGaAs/InP quantum wires and boxesApplied Physics Letters, 1987
- Toward quantum well wires: Fabrication and optical propertiesApplied Physics Letters, 1982
- Localized GaAs Etching with Acidic Hydrogen Peroxide SolutionsJournal of the Electrochemical Society, 1981
- Etching and inhibition of the {111} surfaces of the III–V intermetallic compounds: InSbJournal of Physics and Chemistry of Solids, 1960