Surface diffusion length of cation incorporation studied by microprobe-RHEED/SEM MBE
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 163 (1-2) , 60-66
- https://doi.org/10.1016/0022-0248(95)01050-5
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Inter-surface diffusion of In on (111)A-(001) InAs nonplanar substrates in molecular beam epitaxyJournal of Crystal Growth, 1995
- First real time observation of reconstruction transition associated with Ga droplet formation and annihilation during molecular beam epitaxy of GaAsJournal of Crystal Growth, 1994
- Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs SubstratesJapanese Journal of Applied Physics, 1994
- Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growthJournal of Crystal Growth, 1993
- Self-Limited Facet Growth for GaAs Tetrahedral Quantum DotsJapanese Journal of Applied Physics, 1993
- The role of step kinetics in MBE of compound semiconductorsJournal of Crystal Growth, 1991
- Surface diffusion length observed by in situ scanning microprobe reflection high-energy electron diffractionJournal of Crystal Growth, 1991
- Ideal Crystal Growth from Kink Sites on a GaAs Vicinal Surface by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1990
- Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAsJapanese Journal of Applied Physics, 1988
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975