The role of step kinetics in MBE of compound semiconductors
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 398-405
- https://doi.org/10.1016/0022-0248(91)90775-z
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 12 references indexed in Scilit:
- Surface diffusion and atom incorporation kinetics in MBE of InGaAs and AlGaAsJournal of Crystal Growth, 1991
- Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffractionJournal of Vacuum Science & Technology B, 1990
- Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) SubstratesJapanese Journal of Applied Physics, 1989
- Transformations on clean Si(111) stepped surface during sublimationSurface Science, 1989
- The meandering of steps on GaAs(100)Journal of Crystal Growth, 1989
- Anisotropic surface migration of Ga atoms on GaAs (001)Journal of Crystal Growth, 1989
- Growth Mechanism of GaAs during Migration-Enhanced Epitaxy at Low Growth TemperaturesJapanese Journal of Applied Physics, 1989
- Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAsJapanese Journal of Applied Physics, 1988
- Thermodynamic analysis of molecular beam epitaxy of III–V semiconductorsJournal of Crystal Growth, 1986
- Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy systemApplied Physics Letters, 1985