Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy system
- 1 August 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47  (3) , 286-288
- https://doi.org/10.1063/1.96194
Abstract
Reflection highâenergy electron diffraction(RHEED) intensity oscillation during sublimation of GaAs is observed at high substrate temperatures above 690 °C. This postâgrowth RHEED intensity oscillation suggests that the sublimation occurs layer by layer. One period of this oscillation precisely corresponds to sublimation of one monolayer. Aluminum arsenide acts as a sublimation stopper. The sublimation rate was measured accurately as a function of substrate temperature.Keywords
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