Inter-surface diffusion of In on (111)A-(001) InAs nonplanar substrates in molecular beam epitaxy
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4) , 374-378
- https://doi.org/10.1016/0022-0248(94)00550-8
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 11 references indexed in Scilit:
- Molecular beam epitaxial growth of GaAs, AlAs and Al0.45Ga0.55As on (111) A-(001) V-grooved substratesJournal of Crystal Growth, 1994
- Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs SubstratesJapanese Journal of Applied Physics, 1994
- Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron DiffractionJapanese Journal of Applied Physics, 1993
- Resharpening effect of AlAs and fabrication of quantum-wires on V-grooved substrates by molecular beam epitaxyJournal of Crystal Growth, 1993
- Surface diffusion lenght during MOMBE and CBE growth measured by μ-RHEEDJournal of Crystal Growth, 1992
- The role of step kinetics in MBE of compound semiconductorsJournal of Crystal Growth, 1991
- Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)-(111)B facet structures for edge quantum wiresApplied Physics Letters, 1991
- Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffractionApplied Physics Letters, 1990
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975