Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1R) , 11-17
- https://doi.org/10.1143/jjap.33.11
Abstract
The arsenic pressure dependence of Ga adatom surface diffusion in molecular beam epitaxy (MBE) on nonplanar substrates was investigated. By using in situ scanning microprobe reflection high-energy electron diffraction (µ-RHEED), the distribution of the growth rate of GaAs on the (001) surface near the edge of the (111)A or (111)B sidewall was measured under various arsenic pressures. The surface diffusion length of Ga adatom incorporation on the (001) surface derived from the distribution is on the order of micrometers and it shows a strong dependence on arsenic pressure. A simple model based on one-dimensional surface diffusion was proposed. With this theory, the lifetime of Ga adatom incorporation on other surfaces is obtained.Keywords
This publication has 12 references indexed in Scilit:
- Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron DiffractionJapanese Journal of Applied Physics, 1993
- Resharpening effect of AlAs and fabrication of quantum-wires on V-grooved substrates by molecular beam epitaxyJournal of Crystal Growth, 1993
- Surface diffusion lenght during MOMBE and CBE growth measured by μ-RHEEDJournal of Crystal Growth, 1992
- The role of step kinetics in MBE of compound semiconductorsJournal of Crystal Growth, 1991
- Surface diffusion length observed by in situ scanning microprobe reflection high-energy electron diffractionJournal of Crystal Growth, 1991
- Molecular beam epitaxial growth of GaAs/AlAs and GaAs/AlGaAs quantum wells on sub-micron-period corrugated substratesJournal of Crystal Growth, 1990
- Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffractionJournal of Vacuum Science & Technology B, 1990
- Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffractionApplied Physics Letters, 1990
- Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAsJapanese Journal of Applied Physics, 1988
- Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substratesApplied Physics Letters, 1987