Uniform, high-gain AlGaAs/In/sub 0.05/Ga/sub 0.95/As/GaAs P-n-p heterojunction bipolar transistors by dual selective etch process

1 October 1990

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 11 (10) , 425-427
https://doi.org/10.1109/55.62984

Abstract

AlGaAs/InGaAs/GaAs P-n-p heterojunction bipolar transistors (HBTs) have been fabricated using a dual selective etch process. In this process, a thin AlGaAs surface passivation layer surrounding the emitter is defined by selective etching of the GaAs cap layer. The InGaAs base is then exposed by selective etching of the AlGaAs emitter. The resulting devices were very uniform, with current gain varying by less than +or-10% for a given device size. Current gain at a given emitter current density was independent of device size, with gains of over 200 obtained at current densities above 5*10/sup 4/ A/cm/sup 2/.

Keywords

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