High-resolution X-ray diffraction investigation of crystal perfection and relaxation of GaAs/InGaAs/GaAs quantum wells depending on MOVPE growth conditions
- 1 February 1997
- journal article
- Published by Springer Nature in Il Nuovo Cimento D
- Vol. 19 (2) , 369-376
- https://doi.org/10.1007/bf03040995
Abstract
No abstract availableKeywords
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