Transmission electron microscopic study of the ordered structure in GaInP/GaAs epitaxially grown by metalorganic chemical vapor deposition

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Abstract
GaInP epitaxial crystals grown on (001) GaAs at 660–700 °C by metalorganic chemical vapor deposition are examined by transmission electron microscopy. The computer-processed image of the high-resolution electron micrograph clearly reveals a lamellate-ordered domain structure of two variants of {111} superlattices, which is also investigated using cross-section and plan-view dark field electron micrographs. The spikes of well-defined superspots in the diffraction pattern were found to originate from the shape of the domains. The investigation of GaInP grown with different Zn concentrations showed that the disordering occurs as a result of a decrease in the density rather than the size of the domain.