Ordered structure in OMVPE-grown Ga0.5In0.5P
- 2 April 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 88 (2) , 291-296
- https://doi.org/10.1016/0022-0248(88)90285-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphineJournal of Crystal Growth, 1986
- Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasersJournal of Crystal Growth, 1986
- Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperatureJournal of Crystal Growth, 1986
- Atomic structure and ordering in semiconductor alloysPhysical Review B, 1985