Fermi Level Stabilization in Semiconductors: Implications for Implant Activation Efficiency
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxyApplied Physics Letters, 1987
- Local structure of S impurities in implanted GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAsPhysical Review Letters, 1985
- Epitaxial growth of Cd-doped InP from the vaporJournal of Applied Physics, 1982
- Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1982
- The electrical characteristics of ion implanted compound semiconductorsNuclear Instruments and Methods, 1981
- The effect of implant temperature on the electrical characteristics of ion implanted indium phosphideSolid-State Electronics, 1980
- Hall Effect Measurements of Zn Implanted GaAsJapanese Journal of Applied Physics, 1974
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964