Development of Infrared Detectors Based on Type II, InAsSb Strained-Layer Superlattices
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990
- High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detectorIEEE Electron Device Letters, 1990
- Long-wavelength infrared detectors based on strained InAs–Ga1−xInxSb type-II superlatticesJournal of Vacuum Science & Technology A, 1989
- Photoluminescence and the band structure of InAsSb strained-layer superlatticesApplied Physics Letters, 1988
- Extended infrared response of InAsSb strained-layer superlatticesApplied Physics Letters, 1988
- Optical absorption and x-ray diffraction in narrow-band-gap InAs/GaSb superlatticesJournal of Applied Physics, 1985
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- COMPOSITIONALLY MODULATED SUPERLATTICESPublished by Elsevier ,1985
- Optical absorption of In1−xGaxAsGaSb1−yAsy superlatticesSolid State Communications, 1978