Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure
- 15 September 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (6) , 3391-3397
- https://doi.org/10.1063/1.371219
Abstract
Carrier transport and recombination in a strained InGaAsP/InP multiple-quantum-well structure emitting at 1.55 μm are investigated experimentally and theoretically using both time-resolved photoluminescence and Monte Carlo simulations. A method for including carrier recombination in a Monte Carlo simulation is described. The calculated spectra are in good agreement with the experimental results. They show that nonradiative recombination is the principal recombination process in the first 100 ps and that the screened electron–phonon interactions are responsible for the high luminescence from the quantum-well higher-energy levels.This publication has 32 references indexed in Scilit:
- Monte Carlo calculation of the electron capture time in single quantum wellsJournal of Applied Physics, 1997
- Nonlinear gain coefficients in semiconductor quantum-well lasers: effects of carrier diffusion, capture, and escapeIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Auger recombination in long-wavelength strained-layer quantum-well structuresIEEE Journal of Quantum Electronics, 1995
- Monte Carlo studies on the well-width dependence of carrier capture time in graded-index separate confinement heterostructure quantum well laser structuresApplied Physics Letters, 1993
- Carrier capture times in 1.5 μm multiple quantum well optical amplifiersApplied Physics Letters, 1992
- Effects of carrier transport on high-speed quantum well lasersApplied Physics Letters, 1991
- Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theoryJournal of Applied Physics, 1988
- High speed semiconductor laser design and performanceSolid-State Electronics, 1987
- Resonant carrier capture by semiconductor quantum wellsPhysical Review B, 1986
- The dynamics of electron-hole collection in quantum well heterostructuresJournal of Applied Physics, 1982