Effects of carrier transport on high-speed quantum well lasers
- 7 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (15) , 1835-1837
- https://doi.org/10.1063/1.106213
Abstract
We present a model for the dynamic response of quantum well lasers which shows that the carrier transport across the separate confinement heterostructure region and the barriers can be critical in determining the modulation bandwidth. We also show that, depending on the particular quantum well laser structure, a large part of the experimentally measured reduction in modulation bandwidth is due to transport factors.Keywords
This publication has 14 references indexed in Scilit:
- Single quantum well strained InGaAs/GaAs lasers with large modulation bandwidth and low dampingElectronics Letters, 1991
- High-speed InGaAs/GaAs strained multiple quantum well lasers with low dampingApplied Physics Letters, 1991
- Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor lasersApplied Physics Letters, 1991
- Ultrafast gain dynamics in 1.5 μm multiple quantum well optical amplifiersApplied Physics Letters, 1991
- Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effectsApplied Physics Letters, 1990
- Gain nonlinearities in semiconductor lasers and amplifiersApplied Physics Letters, 1990
- Observation of positive and negative nonlinear gain in an optical injection experiment: Proof of the cavity standing-wave-induced nonlinear gain theory in 1.3 μm wavelength semiconductor diode lasersApplied Physics Letters, 1989
- Thermionic emission and Gaussian transport of holes in a GaAs/As multiple-quantum-well structurePhysical Review B, 1988
- Capture of electrons and holes in quantum wellsApplied Physics Letters, 1988
- Some Design Considerations for Multi-Quantum-Well LasersJapanese Journal of Applied Physics, 1984