Anisotropy of critical field in low-temperature electrical breakdown in n-type silicon
- 1 June 1966
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 27 (6-7) , 919-924
- https://doi.org/10.1016/0022-3697(66)90062-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Anisotropy of Critical Field in Low-Temperature Electrical Breakdown in Uncompensatedn-Type GermaniumPhysical Review B, 1964
- Electrical Conduction in-Type Germanium at Low TemperaturesPhysical Review B, 1962
- Low-Temperature Electrical Breakdown in GermaniumJournal of the Physics Society Japan, 1961
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Acoustoelectric Effect in-Type GermaniumPhysical Review B, 1959
- Anisotropy of the Hot-Electron Problem in Semiconductors with Spheroidal Energy SurfacesPhysical Review B, 1956
- Scattering of Electrons by Lattice Vibrations in Nonpolar CrystalsPhysical Review B, 1956