Anisotropy of Critical Field in Low-Temperature Electrical Breakdown in Uncompensatedn-Type Germanium
- 20 January 1964
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 133 (2A) , A585-A586
- https://doi.org/10.1103/physrev.133.a585
Abstract
Distinct crystal anisotropy of the critical field in low-temperature electrical breakdown is observed on uncompensated -type germanium having the donor concentration of the order of . Quantitative agreement is obtained between the theory and the experiments under the assumptions that (1) intervalley scattering of electrons is negligible, (2) collision times in acoustic phonon and in neutral impurity scatterings are isotropic, and (3) conduction electrons lose their kinetic energies mainly through the neutral donor ionization process.
Keywords
This publication has 6 references indexed in Scilit:
- Inelastic Scattering of Electrons in GermaniumPhysical Review B, 1962
- Low-Temperature Electrical Breakdown in GermaniumJournal of the Physics Society Japan, 1961
- Acoustoelectric Effect in-Type GermaniumPhysical Review B, 1959
- Anisotropy of the Hot-Electron Problem in Semiconductors with Spheroidal Energy SurfacesPhysical Review B, 1956
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955