Dynamical analysis of low-energy-electron diffraction intensities from InP (110)
- 15 December 1980
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 22 (12) , 6171-6183
- https://doi.org/10.1103/physrevb.22.6171
Abstract
No abstract availableThis publication has 51 references indexed in Scilit:
- Atomic geometry of semiconductor surfacesCritical Reviews in Solid State and Materials Sciences, 1978
- Surface and near‐surface atomic structure of GaAs (110)Journal of Vacuum Science and Technology, 1978
- Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)Physical Review B, 1978
- Subsurface atomic displacements at the GaAs(110) surfaceJournal of Vacuum Science and Technology, 1978
- Evidence for subsurface atomic displacements of the GaAs(110) surface from LEED/CMTA analysisSurface Science, 1978
- Surface structures of compound semiconductorsJournal of Vacuum Science and Technology, 1977
- Approach to structure determination of compound semiconductor surfaces by kinematical LEED calculations: GaAs(110) and ZnSe(110)Journal of Vacuum Science and Technology, 1977
- LEED intensity analysis and electron spectroscopy of ZnSe(110)Journal of Vacuum Science and Technology, 1977
- Atomic geometry of cleavage surfaces of tetrahedrally coordinated compound semiconductorsJournal of Vacuum Science and Technology, 1976
- Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)Physical Review Letters, 1976