Index of refraction of n-type InP at 0.633- and 1.15-μm wavelengths as a function of carrier concentration
- 1 June 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (6) , 4340-4343
- https://doi.org/10.1063/1.331213
Abstract
Accurate values of the refractive index of n‐type InP samples have been measured at two wavelengths, n = 0.633 μm and 1.15 μm, using a near‐Brewster‐angle reflectivity technique. For highly doped samples (carrier concentration ≳1018 cm−3) a relationship between carrier density and refractive index has been observed which can be explained in terms of conduction band filling.This publication has 8 references indexed in Scilit:
- Optical reflectance: a sensitive nondestructive method for detecting surface damage in crystalline GaAs and other semiconductorsApplied Optics, 1981
- InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.95-1.65 µm wavelengthIEEE Journal of Quantum Electronics, 1981
- Concentration dependence of the refractive index for n - and p -type GaAs between 1.2 and 1.8 eVJournal of Applied Physics, 1974
- Errors in using the Reflectance vs Angle of Incidence Method for Measuring Optical Constants*Journal of the Optical Society of America, 1965
- Refractive Index of GaAsJournal of Applied Physics, 1964
- Optical Studies of the Band Structure of InPJournal of Applied Physics, 1961
- The Interpretation of the Properties of Indium AntimonideProceedings of the Physical Society. Section B, 1954
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954