Orientation-dependent phase modulation in InGaAs/GaAs multiquantum well waveguides
- 28 November 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (22) , 2129-2131
- https://doi.org/10.1063/1.100295
Abstract
The electro‐optic effect and phase modulation in In0.2 Ga0.8 As/GaAs multiple quantum wells have been experimentally studied for the first time. The experiments were done with 1.06 and 1.15 μm photoexcitation which are, respectively, 25 and 115 meV below the electron–heavy hole excitonic resonance. Strong quadratic electro‐optic effect was observed near the excitonic edge in addition to the linear effect. These are characterized by r63 =−1.85×10−19 m/V and (R33 −R13 )=2.9×10−19 m2 /V2 . In addition, we observe a dispersion in the value of r63 . The relative phase shifts are higher in the strained system at 1.06 μm than in lattice‐matched GaAs/AlGaAsKeywords
This publication has 11 references indexed in Scilit:
- Low-voltage phase modulation in GaAs/AlGaAs quantum well optical waveguidesElectronics Letters, 1988
- Nonlinear effects in coplanar GaAs/InGaAs strained-layer superlattice directional couplersApplied Physics Letters, 1987
- Electro-optic effects and electroabsorption in a GaAs/AlGaAs multiquantum-well heterostructure near the bandgapElectronics Letters, 1987
- Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodesApplied Physics Letters, 1987
- InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguideOptics Letters, 1987
- Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structureApplied Physics Letters, 1986
- Strong polarization-sensitive electroabsorption in GaAs/AlGaAs quantum well waveguidesApplied Physics Letters, 1985
- Photocurrent multiplication in ion implanted lateral In0.2Ga0.8As/GaAs strained-layer superlattice photodetectorsApplied Physics Letters, 1985
- Electric-field-induced refractive index variation in quantum-well structureElectronics Letters, 1985
- Continuous 300-K laser operation of strained superlatticesApplied Physics Letters, 1983