Effects of growth temperature and [PH 3 ]/[In(C 2 H 5 ) 3 ] on purity of epitaxial InP grown by metalorganic chemical vapour deposition
- 14 February 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (4) , 131-132
- https://doi.org/10.1049/el:19850093
Abstract
High-purity undoped InP epitaxial layers (ND − NA = 5 × 1014 cm−3, μ77≥105 cm2/Vs) are grown by low-pressure metalorganic chemical vapour deposition. The carrier concentrations decrease and the electron mobilities increase as the growth temperature decreases from 700°C to 575°C and the mole fraction ratios ([PH3]/[In(C2H5)3]) increase from 29 to 290.Keywords
This publication has 1 reference indexed in Scilit:
- MOCVD Growth for Heterostructures and Two-Dimensional Electronic SystemsPublished by Springer Nature ,1984