MOCVD Growth for Heterostructures and Two-Dimensional Electronic Systems
- 1 January 1984
- book chapter
- Published by Springer Nature
Abstract
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This publication has 7 references indexed in Scilit:
- Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressureJournal of Crystal Growth, 1983
- Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor depositionJournal of Applied Physics, 1983
- High magnetic field studies of the two-dimensional electron gas in GaInAs-InP superlatticesApplied Physics Letters, 1983
- Low pressure-MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlatticesJournal of Vacuum Science & Technology B, 1983
- Low pressure metalorganic chemical vapor deposition of InP and related compoundsJournal of Electronic Materials, 1983
- Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor depositionApplied Physics Letters, 1982