Observation on stress effect in Schottky barrier diodes
- 31 May 1969
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5) , 441-442
- https://doi.org/10.1016/0038-1101(69)90103-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Effect of generation-recombination centers on the stress-dependence of Si p-n junction characteristicsSolid-State Electronics, 1967
- Properties of gold in siliconSolid-State Electronics, 1966
- Resistance of Elastically Deformed Shallow p-n Junctions. IIJournal of Applied Physics, 1963
- Conduction properties of the Au-n-type—Si Schottky barrierSolid-State Electronics, 1963