Excited states deactivating exclusively through correlated electron tunneling
- 15 July 1984
- journal article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 81 (2) , 851-854
- https://doi.org/10.1063/1.447720
Abstract
The consideration of polycenter excited states in impurity complexes in which N electrons are distributed over 2N sites is given. We demonstrate that for specific spatial arrangements of these sites, the system as a whole can undergo into the ground state only through the simultaneous correlated tunnel transition of all N electrons. Cases for N=2, 3, and 4 are considered explicitly.Keywords
This publication has 13 references indexed in Scilit:
- Radiative unstabilities in some triple electronic colour centre systems in ionic crystalsPhysics Letters A, 1983
- Electron induced lattice relaxations and defect reactionsPhysica B+C, 1983
- Determination of the electrical level of vacancy in electron irradiated p-type siliconPhysics Letters A, 1982
- Semiempirical Calculations of Defect Properties in LiF Crystal. II. Electron and Hole Centres and Their RecombinationPhysica Status Solidi (b), 1982
- Radiative recombination of donor-acceptor pairs in ZnTeSolid State Communications, 1981
- Negative-U Properties for Point Defects in SiliconPhysical Review Letters, 1980
- Radiative Recombination at Donors and Acceptors. Averaging over the Configuration of Majority ImpuritiesPhysica Status Solidi (b), 1980
- Generalized theory of zero-phonon radiative transitions of donor—acceptor pairsJournal of Luminescence, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- On the Spectral Intensity Distribution of Donor–Acceptor Pair Recombination in GaPPhysica Status Solidi (b), 1974