Variation of Bandgap in Nanocrystalline Silicon as Monitored by Subgap Photoluminescence
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electronic Properties of Microcrystalline SiliconMRS Proceedings, 1997
- On the Way Towards High Efficiency Thin Film Silicon Solar Cells by the “Micromorph” ConceptMRS Proceedings, 1996
- Band-tail photoluminescence in polycrystalline silicon thin filmsApplied Physics Letters, 1995
- Origin and Incorporation Mechanism for Oxygen Contaminants in a-Si:H and μc-Si:H Films Prepared by the Very High Frequency (70 MHz) Glow Discharge TechniqueMRS Proceedings, 1995
- Photoluminescence of Extended Defects in Silicon-on-Insulator Formed by Implantation of OxygenMRS Proceedings, 1995
- Photoluminescence and microstructural properties of high-temperature annealed buried oxide silicon-on-insulatorApplied Physics Letters, 1987
- Plasma deposited microcrystalline and amorphous silicon — a comparative study of photoluminescencePhysica B+C, 1983
- Oxygen-related donor states in siliconApplied Physics Letters, 1981
- The temperature dependence of photoluminescence in a-Si: H alloysSolid State Communications, 1980
- On the electrical activity of oxygen in siliconPhysica Status Solidi (a), 1979