High-performance microwave AlGaAs-InGaAs Pnp HBT with high-DC current gain
- 1 August 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (8) , 331-333
- https://doi.org/10.1109/75.153604
Abstract
An Pnp heterojunction bipolar transistor (HBT) which had among the highest reported values of f/sub T/( approximately 23 GHz) and f/sub max/( approximately 40 GHz) employed a heavily doped InGaAs pseudomorphic base. However, this HBT had very low values of DC current gain (<or=4). Pnp microwave HBTs with a modified base design are reported. These HBTs not only achieve similar high-frequency performance, but also attain dramatically higher current gain values approximately 90.Keywords
This publication has 10 references indexed in Scilit:
- Experimental comparison of base recombination currents in abrupt and graded AlGaAs/GaAs heterojunction bipolar transistorsElectronics Letters, 1991
- Millimeter-wave AlGaAs/GaAs p-n-p HBTIEEE Electron Device Letters, 1991
- Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuitIEEE Transactions on Electron Devices, 1991
- High frequency Pnp AlGaAs/InGaAs heterojunction bipolar transistor with an ultrathin strained baseElectronics Letters, 1990
- AlGaAs/GaAs P-n-p HBTs with high maximum frequency of oscillationIEEE Electron Device Letters, 1990
- Material properties of p-type GaAs at large dopingsApplied Physics Letters, 1990
- I n s i t u measurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substratesApplied Physics Letters, 1989
- Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistorElectronics Letters, 1989
- GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applicationsIEEE Transactions on Microwave Theory and Techniques, 1989
- Emitter—Base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistor characteristicsIEEE Transactions on Electron Devices, 1985