Enhanced Sb diffusion in Si under thermal Si3N4 films during annealing in Ar
- 24 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (17) , 1593-1595
- https://doi.org/10.1063/1.100439
Abstract
The effect of the presence of a thermally grown Si3N4 film on Sb diffusion in Si during annealing in Ar at 1100 °C has been investigated. Enhanced Sb diffusion under thermal nitride was observed and the enhancement effect disappeared when the nitride was removed before Ar annealing. These results strongly suggest that the enhanced Sb diffusion observed during thermal nitridation of Si is not directly related to the growth of thermal nitride. These effects are instead attributed to stresses in the thermal nitride film. Possible mechanisms of dopant diffusion affected by stresses in thin films are discussed.Keywords
This publication has 10 references indexed in Scilit:
- Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in siliconApplied Physics Letters, 1985
- Thermal nitridation of Si and SiO2for VLSIIEEE Transactions on Electron Devices, 1985
- VLSI Process modeling—SUPREM IIIIEEE Transactions on Electron Devices, 1983
- Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 siliconApplied Physics Letters, 1983
- Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in SiJournal of Applied Physics, 1983
- Shrinkage and growth of oxidation stacking faults during thermal nitridation of silicon and oxidized siliconJournal of Applied Physics, 1982
- Silicon nitride single-layer x-ray maskJournal of Vacuum Science and Technology, 1982
- Nitridation of Silicon and Oxidized‐SiliconJournal of the Electrochemical Society, 1982
- Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with NitrogenJournal of the Electrochemical Society, 1978
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974