Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Design And Fabrication Of Nitride Based High Power DevicesMRS Proceedings, 1997
- Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon SubstratesMRS Proceedings, 1995
- Evaluation of diffusion length and surface-recombination velocity from a planar-collector-geometry electron-beam-induced current scanJournal of Applied Physics, 1985