Design And Fabrication Of Nitride Based High Power Devices
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon SubstratesMRS Proceedings, 1995
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993