Electronic structure of GaN stacking faults
- 15 August 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 56 (7) , 3564-3566
- https://doi.org/10.1103/physrevb.56.3564
Abstract
The calculation of the electronic structure of the GaN stacking faults in the framework of the local empirical pseudopotential theory is presented. The stacking faults in both zinc-blende and wurtzite GaN are predicted to introduce electronic levels within the band gap, with the energy (0.13±0.01) eV above the valence-band top. These levels are found to originate from interface states of heterocrystalline wurtzite (0001)-zinc-blende (111) interfaces. The possible implications of stacking fault electronic states on the luminescence properties of GaN are discussed.Keywords
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